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Shin, Hyung-Joon
Nanoscale Materials Science Lab (NMSL)
Research Interests
  • Scanning tunneling microscopy, surface science, interface science, nanomaterials

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Trapped carrier dynamics in dielectric nanodots

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Title
Trapped carrier dynamics in dielectric nanodots
Author
Yang, H.Shin, Hyung-JoonKuk, Y.
Keywords
AFM; Patterning; SPM
Issue Date
2010-05
Publisher
ELSEVIER SCIENCE BV
Citation
CURRENT APPLIED PHYSICS, v.10, no.3, pp.957 - 961
Abstract
Trapped carrier dynamics has been studied on Si3 N4 nanodots grown by plasma enhanced chemical vapor deposition (PECVD) and on SiO2 nanodots grown by pulsed laser deposition (PLD) on Si wafers. Carrier dynamics can be explained with a model based on Coulomb interaction with the boundary conditions of the nanodot structure. The trapped charge can be estimated quantitatively from the measured trap dynamics, elucidating the electrostatic effect in a small dielectric system.
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DOI
10.1016/j.cap.2009.11.080
ISSN
1567-1739
Appears in Collections:
MSE_Journal Papers
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