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Shin, Hyung-Joon
Nanoscale Materials Science Lab (NMSL)
Research Interests
  • Scanning tunneling microscopy, surface science, interface science, nanomaterials

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Trapped carrier dynamics in dielectric nanodots

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dc.contributor.author Yang, H. ko
dc.contributor.author Shin, Hyung-Joon ko
dc.contributor.author Kuk, Y. ko
dc.date.available 2014-10-27T00:11:41Z -
dc.date.created 2014-10-24 ko
dc.date.issued 2010-05 -
dc.identifier.citation CURRENT APPLIED PHYSICS, v.10, no.3, pp.957 - 961 ko
dc.identifier.issn 1567-1739 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7757 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=73549116999 ko
dc.description.abstract Trapped carrier dynamics has been studied on Si3 N4 nanodots grown by plasma enhanced chemical vapor deposition (PECVD) and on SiO2 nanodots grown by pulsed laser deposition (PLD) on Si wafers. Carrier dynamics can be explained with a model based on Coulomb interaction with the boundary conditions of the nanodot structure. The trapped charge can be estimated quantitatively from the measured trap dynamics, elucidating the electrostatic effect in a small dielectric system. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher ELSEVIER SCIENCE BV ko
dc.subject AFM ko
dc.subject Patterning ko
dc.subject SPM ko
dc.title Trapped carrier dynamics in dielectric nanodots ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-73549116999 ko
dc.identifier.wosid 000273437900046 ko
dc.type.rims ART ko
dc.description.wostc 0 *
dc.description.scopustc 0 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-24 *
dc.identifier.doi 10.1016/j.cap.2009.11.080 ko
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