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Kim, Ju-Young
Robust Multifunctional Materials Lab
Research Interests
  • Flexible / stretchable devices, nano-mechanics, nanoporous metal, materials reliability

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Molecular dynamics analysis of structure and intrinsic stress in amorphous silicon carbide film with deposition process parameters

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Title
Molecular dynamics analysis of structure and intrinsic stress in amorphous silicon carbide film with deposition process parameters
Author
Kim, Ju-YoungLee, BWNam, HSKwon, D
Keywords
Amorphous silicon carbide; Incident energy; Molecular dynamics simulation; Substrate temperature
Issue Date
2004
Publisher
Trans Tech Publications
Citation
MATERIALS SCIENCE FORUM, v.449, no.1, pp.97 - 100
Abstract
Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.
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ISSN
0255-5476
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