dc.citation.endPage |
100 |
- |
dc.citation.number |
1 |
- |
dc.citation.startPage |
97 |
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dc.citation.title |
MATERIALS SCIENCE FORUM |
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dc.citation.volume |
449 |
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dc.contributor.author |
Kim, Ju-Young |
- |
dc.contributor.author |
Lee, BW |
- |
dc.contributor.author |
Nam, HS |
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dc.contributor.author |
Kwon, D |
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dc.date.accessioned |
2023-12-22T11:07:42Z |
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dc.date.available |
2023-12-22T11:07:42Z |
- |
dc.date.created |
2014-10-23 |
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dc.date.issued |
2004 |
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dc.description.abstract |
Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed. |
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dc.identifier.bibliographicCitation |
MATERIALS SCIENCE FORUM, v.449, no.1, pp.97 - 100 |
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dc.identifier.doi |
10.4028/www.scientific.net/MSF.449-452.97 |
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dc.identifier.issn |
0255-5476 |
- |
dc.identifier.scopusid |
2-s2.0-3142764032 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7683 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=3142764032 |
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dc.identifier.wosid |
000189492000021 |
- |
dc.language |
영어 |
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dc.publisher |
Trans Tech Publications |
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dc.title |
Molecular dynamics analysis of structure and intrinsic stress in amorphous silicon carbide film with deposition process parameters |
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dc.type |
Article |
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dc.description.isOpenAccess |
FALSE |
- |
dc.description.journalRegisteredClass |
scie |
- |
dc.description.journalRegisteredClass |
scopus |
- |