Interface structure and strain relaxation in BaTiO3 thin films grown on GdScO3 and DyScO3 substrates with buried coherent SrRuO3 layer
Cited 7 times in
Cited 7 times in
- Title
- Interface structure and strain relaxation in BaTiO3 thin films grown on GdScO3 and DyScO3 substrates with buried coherent SrRuO3 layer
- Author
- Chen, Y. B.; Sun, H. P.; Katz, M. B.; Pan, X. Q.; Choi, Kyoung Jin; Jang, H. W.; Eom, C. B.
- Keywords
- DISLOCATION; FERROELECTRICITY; ENHANCEMENT; EVOLUTION; SRTIO3
- Issue Date
- 2007-12
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.91, no.25, pp. -
- Abstract
- To obtain the electrical properties of strained ferroelectric thin films, bottom electrodes with lattice constants and thermal coefficients matched to both films and substrates are needed. The interface structure, strain configuration, and strain relaxation in such bilayer systems are different from those in single layer systems. Here, we report transmission electron microscopy studies of epitaxial BaTiO3 films grown on GdScO3 and DyScO3 substrates with buried SrRuO3 layers. We found that the different strain relaxation behaviors observed in the bilayer are mainly dependent on lattice mismatch of each layer to the substrate and the thicknesses of each layer.
- URI
- ; Go to Link
- DOI
- 10.1063/1.2819684
- ISSN
- 0003-6951
- Appears in Collections:
- MSE_Journal Papers
- Files in This Item:
-
2-s2.0-37549051290.pdf
Download
can give you direct access to the published full text of this article. (UNISTARs only)
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.