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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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Analytic Model for Low-Frequency Noise in Nanorod Devices

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Title
Analytic Model for Low-Frequency Noise in Nanorod Devices
Author
Lee, JungilYu, Byung YongHan, IlkiChoi, Kyoung JinGhibaudo, Gerard
Keywords
Field-Effect Transistors;  Low-Frequency Noise;  Nanorods;  Oxide Traps;  Surface States
Issue Date
2008-10
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.8, no.10, pp.5257 - 5260
Abstract
In this work analytic model for generation of excess low-frequency noise in nanorod devices such as field-effect transistors are developed. In back-gate field-effect transistors where most of the surface area of the nanorod is exposed to the ambient, the surface states could be the major noise source via random walk of electrons for the low-frequency or 1/f noise. In dual gate transistors, the interface states and oxide traps can compete with each other as the main noise source via random walk and tunneling, respectively.
URI
https://scholarworks.unist.ac.kr/handle/201301/7621
DOI
10.1166/jnn.2008.1034
ISSN
1533-4880
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