dc.citation.endPage |
S608 |
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dc.citation.startPage |
S605 |
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dc.citation.title |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY |
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dc.citation.volume |
45 |
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dc.contributor.author |
Baik, Jeong Min |
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dc.contributor.author |
Lee, JL |
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dc.contributor.author |
Shon, Y |
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dc.contributor.author |
Kang, TW |
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dc.date.accessioned |
2023-12-22T10:40:48Z |
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dc.date.available |
2023-12-22T10:40:48Z |
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dc.date.created |
2014-10-17 |
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dc.date.issued |
2004-12 |
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dc.description.abstract |
N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700 - 900 degreesC. Compared with the Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. The intensity of the Mn-related photoluminescence peak increased as N ions were implanted, indicating an increase in hole concentration due to an enhanced activation of Mn impurities in p-type GaN. From Raman spectra, a compressive stress was induced in the (Mn+N)implanted GaN, meaning that the concentration of Mn ions that occupied Ga sites increased, resulting in the reduction of Mn-N compounds such as Mn6N2.58. As a result, the N-vacancies reduced and net hole concentration increased, leading to the enhancement of the ferromagnetic property. |
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dc.identifier.bibliographicCitation |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S605 - S608 |
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dc.identifier.issn |
0374-4884 |
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dc.identifier.scopusid |
2-s2.0-12844258324 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7404 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=12844258324 |
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dc.identifier.wosid |
000226119400029 |
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dc.language |
영어 |
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dc.publisher |
KOREAN PHYSICAL SOC |
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dc.title |
Microstructural and optical properties of ferromagnetic (Ga,Mn)N semiconductor |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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