ScholarWorks: Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

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Nano Energy and Environmental Materials Lab

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Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

DC Field	Value	Language
dc.contributor.author	Baik, Jeong Min	ko
dc.contributor.author	Jang, HW	ko
dc.contributor.author	Kim, JK	ko
dc.contributor.author	Lee, JL	ko
dc.date.available	2014-10-17T08:39:32Z	-
dc.date.created	2014-10-17	ko
dc.date.issued	2003-01	-
dc.identifier.citation	APPLIED PHYSICS LETTERS, v.82, no.4, pp.583 - 585	ko
dc.identifier.issn	0003-6951	ko
dc.identifier.uri	https://scholarworks.unist.ac.kr/handle/201301/7398	-
dc.identifier.uri	http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037468076	ko
dc.description.abstract	The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.	ko
dc.description.statementofresponsibility	open	-
dc.language	ENG	ko
dc.publisher	AMER INST PHYSICS	ko
dc.subject	DEFECTS	ko
dc.title	Effect of microstructural change on magnetic property of Mn-implanted p-type GaN	ko
dc.type	ARTICLE	ko
dc.identifier.scopusid	2-s2.0-0037468076	ko
dc.identifier.wosid	000180564000033	ko
dc.type.rims	ART	ko
dc.description.wostc	58	*
dc.description.scopustc	62	*
dc.date.tcdate	2015-05-06	*
dc.date.scptcdate	2014-10-17	*
dc.identifier.doi	10.1063/1.1541111	ko