dc.citation.endPage |
585 |
- |
dc.citation.number |
4 |
- |
dc.citation.startPage |
583 |
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dc.citation.title |
APPLIED PHYSICS LETTERS |
- |
dc.citation.volume |
82 |
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dc.contributor.author |
Baik, Jeong Min |
- |
dc.contributor.author |
Jang, HW |
- |
dc.contributor.author |
Kim, JK |
- |
dc.contributor.author |
Lee, JL |
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dc.date.accessioned |
2023-12-22T11:36:09Z |
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dc.date.available |
2023-12-22T11:36:09Z |
- |
dc.date.created |
2014-10-17 |
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dc.date.issued |
2003-01 |
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dc.description.abstract |
The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN. |
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dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.82, no.4, pp.583 - 585 |
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dc.identifier.doi |
10.1063/1.1541111 |
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dc.identifier.issn |
0003-6951 |
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dc.identifier.scopusid |
2-s2.0-0037468076 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7398 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037468076 |
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dc.identifier.wosid |
000180564000033 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Effect of microstructural change on magnetic property of Mn-implanted p-type GaN |
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dc.type |
Article |
- |
dc.description.journalRegisteredClass |
scopus |
- |