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Baik, Jeong Min
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DC Field Value Language
dc.citation.endPage G540 -
dc.citation.number 8 -
dc.citation.startPage G536 -
dc.citation.title JOURNAL OF THE ELECTROCHEMICAL SOCIETY -
dc.citation.volume 151 -
dc.contributor.author Jang, HW -
dc.contributor.author Baik, Jeong Min -
dc.contributor.author Lee, MK -
dc.contributor.author Shin, HJ -
dc.contributor.author Lee, JL -
dc.date.accessioned 2023-12-22T11:07:44Z -
dc.date.available 2023-12-22T11:07:44Z -
dc.date.created 2014-10-17 -
dc.date.issued 2004 -
dc.description.abstract The chemistry of oxygen atoms at the surface of an AlGaN layer for Al 0.35Ga0.65N/GaN heterostructures was investigated by scanning photoemission microscopy (SPEM) using synchrotron radiation. SPEM imaging and space-resolved photoemission spectroscopy showed that the oxygen atoms were preferentially incorporated into AlGaN rather than GaN due to the high reactivity of Al with oxygen. In situ annealing at 1000°C could lead to the outdiffusion of oxygen impurities from the bulk AlGaN, resulting in a significant increase in the intensity of Al-O bonds at the AlGaN surface. Therefore, it is suggested that the unintentional doping of oxygen impurities in AlGaN could yield a heavily doped n-type AlGaN layer, resulting in a drastic reduction in effective Schottky barrier heights of metal contacts on AlGaN/GaN heterostructures. -
dc.identifier.bibliographicCitation JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.8, pp.G536 - G540 -
dc.identifier.doi 10.1149/1.1768951 -
dc.identifier.issn 0013-4651 -
dc.identifier.scopusid 2-s2.0-4344559491 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7391 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4344559491 -
dc.identifier.wosid 000222969500058 -
dc.language 영어 -
dc.publisher ELECTROCHEMICAL SOC INC -
dc.title Incorporation of oxygen donors in AlGaN -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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