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- Baik, Jeong Min
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 1122 | - |
| dc.citation.number | 7 | - |
| dc.citation.startPage | 1120 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 84 | - |
| dc.contributor.author | Baik, Jeong Min | - |
| dc.contributor.author | Shon, Y | - |
| dc.contributor.author | Kang, TW | - |
| dc.contributor.author | Lee, JL | - |
| dc.date.accessioned | 2023-12-22T11:07:03Z | - |
| dc.date.available | 2023-12-22T11:07:03Z | - |
| dc.date.created | 2014-10-17 | - |
| dc.date.issued | 2004-02 | - |
| dc.description.abstract | N and Mn ions were co-implanted into p-type GaN and subsequently annealed at 700-900degreesC. Compared with Mn-implanted sample, the (Mn+N)-implanted sample revealed a larger ferromagnetic signal. This was attributed to the increase of Ga-Mn magnetic phases. Mn-N compounds, such as Mn6N2.58 and Mn3N2, decreased and the resistivity significantly increased, meaning a reduction of N vacancies. It is suggested that enhancement in ferromagnetic properties in the (Mn+N)-implanted GaN originated from the reduction of N vacancies and the increase of Ga-Mn magnetic phases. | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.84, no.7, pp.1120 - 1122 | - |
| dc.identifier.doi | 10.1063/1.1647282 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.scopusid | 2-s2.0-1542469554 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7390 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=1542469554 | - |
| dc.identifier.wosid | 000188880000031 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Enhancement of magnetic properties by nitrogen implantation to Mn-implanted p-type GaN | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scopus | - |
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