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백정민

Baik, Jeong Min
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dc.citation.endPage 3 -
dc.citation.number 4 -
dc.citation.startPage 1 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 87 -
dc.contributor.author Baik, Jeong Min -
dc.contributor.author Shon, Y -
dc.contributor.author Kang, TW -
dc.contributor.author Lee, JL -
dc.date.accessioned 2023-12-22T10:36:07Z -
dc.date.available 2023-12-22T10:36:07Z -
dc.date.created 2014-10-17 -
dc.date.issued 2005-07 -
dc.description.abstract Ferromagnetic properties of (Ga,Mn)N nanowires were examined by treating with nitrogen plasma at 200 °C. Nanowires grown by chemical vapor deposition were n-type and no secondary phases were found. The magnetic moment increased and was maintained at room temperature by this treatment. Synchrotron radiation photoemission spectroscopy revealed that Ga vacancies significantly increased, but N vacancies decreased by plasma treatment, leading to a decrease of MnGa-VN complex and the enhancement of Mn activation. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.87, no.4, pp.1 - 3 -
dc.identifier.doi 10.1063/1.1999862 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-23644456168 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7386 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=23644456168 -
dc.identifier.wosid 000230725900030 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus MN-IMPLANTED GAN -
dc.subject.keywordPlus MG-DOPED GAN -
dc.subject.keywordPlus MAGNETIC-PROPERTIES -
dc.subject.keywordPlus SEMICONDUCTORS -
dc.subject.keywordPlus FILMS -
dc.subject.keywordPlus ACCEPTOR -

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