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High-performance graphene top-gate FETs with air dielectric using foldable substrates

Author(s)
Pyo,Kyoung-Hee
Advisor
Park, Jang-Ung
Issued Date
2015-02
URI
https://scholarworks.unist.ac.kr/handle/201301/71873 http://unist.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001924528
Abstract
Foldable electronic devices are experiencing rapid growth and expected to a prospective candidate for not only wearable electronics but also smaller electronics raising more functionality. In this paper, we fabricated a completely foldable substrate using unconventional manufacturing processes and intrinsically stretchable interconnect conductor. The foldable substrate composed of rigid and elastomeric materials allow the substrate to be deformed freely into pre-patterned architectures without any damages. We fabricate top-gate field effect-transistors with air dielectric by utilizing our foldable substrate, therefore, can achieve a clear interface between channel and gate dielectric. These graphene FETs show outstanding properties with the highest mobility of 300,000 cm2/V•s and strong reliability. These results represent high potential towards foldable and wearable electronics through the folding capability.
Publisher
Ulsan National Institute of Science and Technology (UNIST)
Degree
Master
Major
Department Of Materials Science Engineering

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