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dc.contributor.advisor Park, Jang-Ung -
dc.contributor.author Pyo,Kyoung-Hee -
dc.date.accessioned 2024-01-24T15:26:38Z -
dc.date.available 2024-01-24T15:26:38Z -
dc.date.issued 2015-02 -
dc.description.abstract Foldable electronic devices are experiencing rapid growth and expected to a prospective candidate for not only wearable electronics but also smaller electronics raising more functionality. In this paper, we fabricated a completely foldable substrate using unconventional manufacturing processes and intrinsically stretchable interconnect conductor. The foldable substrate composed of rigid and elastomeric materials allow the substrate to be deformed freely into pre-patterned architectures without any damages. We fabricate top-gate field effect-transistors with air dielectric by utilizing our foldable substrate, therefore, can achieve a clear interface between channel and gate dielectric. These graphene FETs show outstanding properties with the highest mobility of 300,000 cm2/V•s and strong reliability. These results represent high potential towards foldable and wearable electronics through the folding capability. -
dc.description.degree Master -
dc.description Department Of Materials Science Engineering -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/71873 -
dc.identifier.uri http://unist.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001924528 -
dc.language eng -
dc.publisher Ulsan National Institute of Science and Technology (UNIST) -
dc.rights.embargoReleaseDate 9999-12-31 -
dc.rights.embargoReleaseTerms 9999-12-31 -
dc.title High-performance graphene top-gate FETs with air dielectric using foldable substrates -
dc.type Thesis -

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