dc.contributor.advisor |
Park, Jang-Ung |
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dc.contributor.author |
Pyo,Kyoung-Hee |
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dc.date.accessioned |
2024-01-24T15:26:38Z |
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dc.date.available |
2024-01-24T15:26:38Z |
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dc.date.issued |
2015-02 |
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dc.description.abstract |
Foldable electronic devices are experiencing rapid growth and expected to a prospective candidate for not only wearable electronics but also smaller electronics raising more functionality. In this paper, we fabricated a completely foldable substrate using unconventional manufacturing processes and intrinsically stretchable interconnect conductor. The foldable substrate composed of rigid and elastomeric materials allow the substrate to be deformed freely into pre-patterned architectures without any damages. We fabricate top-gate field effect-transistors with air dielectric by utilizing our foldable substrate, therefore, can achieve a clear interface between channel and gate dielectric. These graphene FETs show outstanding properties with the highest mobility of 300,000 cm2/V•s and strong reliability. These results represent high potential towards foldable and wearable electronics through the folding capability. |
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dc.description.degree |
Master |
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dc.description |
Department Of Materials Science Engineering |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/71873 |
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dc.identifier.uri |
http://unist.dcollection.net/jsp/common/DcLoOrgPer.jsp?sItemId=000001924528 |
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dc.language |
eng |
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dc.publisher |
Ulsan National Institute of Science and Technology (UNIST) |
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dc.rights.embargoReleaseDate |
9999-12-31 |
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dc.rights.embargoReleaseTerms |
9999-12-31 |
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dc.title |
High-performance graphene top-gate FETs with air dielectric using foldable substrates |
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dc.type |
Thesis |
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