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- Kim, Jin Young
- Next Generation Energy Lab.
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금속산화물 박막을 포함하는 트랜지스터 제조 방법
- Alternative Title
- Method for preparing transistor containing metal oxide thin film
- Author(s)
- 김진영, 박송이, 허정우, Walker Bright James
- Application Date
- 2017-06-21
- Registration Date
- 2020-03-19
- Application No.
- 10-2017-0078793
- Publication No.
- 10-2093415
- Abstract
- 본 발명은 트랜지스터 제조방법에 관한 것으로, 보다 상세하게는 저온 용액 공정을 통해 표면 거칠기가 낮은 금속산화물 박막을 포함한 트랜지스터 제조방법이 제공된다.
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