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- Kim, Jin Young
- Next Generation Energy Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.assignee | 울산과학기술원 | - |
| dc.contributor.author | 김진영 | - |
| dc.contributor.author | 박송이 | - |
| dc.contributor.author | 허정우 | - |
| dc.contributor.author | Walker Bright James | - |
| dc.date.accessioned | 2024-01-23T19:06:04Z | - |
| dc.date.application | 2017-06-21 | - |
| dc.date.available | 2024-01-23T19:06:04Z | - |
| dc.date.registration | 2020-03-19 | - |
| dc.description.abstract | 본 발명은 트랜지스터 제조방법에 관한 것으로, 보다 상세하게는 저온 용액 공정을 통해 표면 거칠기가 낮은 금속산화물 박막을 포함한 트랜지스터 제조방법이 제공된다. | - |
| dc.identifier.patentApplicationNumber | 10-2017-0078793 | - |
| dc.identifier.patentRegistrationNumber | 10-2093415 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/70316 | - |
| dc.title.alternative | Method for preparing transistor containing metal oxide thin film | - |
| dc.title | 금속산화물 박막을 포함하는 트랜지스터 제조 방법 | - |
| dc.type | Patent | - |
| dc.publisher.country | KO | - |
| dc.type.iprs | 특허 | - |
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