We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300K without mixing with anisotropic magnetoresistance, which is evidently verifi ed by observing a memory effect.