Spin injection and detection in In0.53Ga0.47As nanomembrane channels transferred onto Si substrates

Abstract

We investigate the electrical spin injection and detection in In0.53Ga0.47As nanomembranes, which are originally grown on InP substrates and subsequently heterogeneously integrated on SiO2/Si substrates via a transfer printing technique. Through local and nonlocal spin valve measurements employing the In0.53Ga0.47As nanomembrane channels on SiO2/Si substrates, we successfully observe the electrical detection of spin injection from Ni81Fe19ferromagnetic metal electrodes into the channels. Furthermore, nonlocal spin valve signals are detected up to T = 300K without mixing with anisotropic magnetoresistance, which is evidently verifi ed by observing a memory effect.