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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application

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Graphene oxide assisted spontaneous growth of V2O5 nanowires at room temperature

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Title
Graphene oxide assisted spontaneous growth of V2O5 nanowires at room temperature
Author
Lee, MinohHong, Won G.Jeong, Hu YoungBalasingam, Suresh KannanLee, ZonghoonChang, Sung-JinKim, Byung HoonJun, Yongseok
Issue Date
2014-10
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE, v.6, no.19, pp.11066 - 11071
Abstract
Graphene-decorated single crystalline V2O5nanowires (G-VONs) have been synthesized by mixing graphene oxide (GO) and V2O5suspensions at room temperature. In this process, V2O5nanowires (VONs) are formed spontaneously from commercial V2O5particles with the aid of GO. The as-formed one dimensional G-VONs were characterized by using a X-ray diffractometer, a X-ray photoelectron spectrometer, a scanning electron microscope, and a transmission electron microscope. GO plays a vital role in the VON formation with the simultaneous reduction of GO. A single G-VON showed superior electrical conductivity compared with that of the pure VONs obtained from the sol-gel method. This could be ascribed to the insertion of rGO sheets into the V2O5layered structure, which was further confirmed by electron energy loss spectroscopy.
URI
https://scholarworks.unist.ac.kr/handle/201301/6644
URL
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84907159520
DOI
10.1039/c4nr01780c
ISSN
2040-3364
Appears in Collections:
MSE_Journal Papers
UCRF_Journal Papers
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