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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM
  • Insitu-TEM characterization of carbon-based materials using nanofactory STM holder for Li-ion battery application
  • Structural characterization of mesoporous materials using SEM & TEM
  • Interface analysis between various oxides and metals through Cs-corrected (S)TEM
  • Resistive switching mechanism of graphene oxide thin films for RRAM application


Graphene oxide assisted spontaneous growth of V2O5 nanowires at room temperature

DC Field Value Language Lee, Minoh ko Hong, Won G. ko Jeong, Hu Young ko Balasingam, Suresh Kannan ko Lee, Zonghoon ko Chang, Sung-Jin ko Kim, Byung Hoon ko Jun, Yongseok ko 2014-10-02T00:11:54Z - 2014-09-30 ko 2014-10 ko
dc.identifier.citation NANOSCALE, v.6, no.19, pp.11066 - 11071 ko
dc.identifier.issn 2040-3364 ko
dc.identifier.uri -
dc.description.abstract Graphene-decorated single crystalline V2O5nanowires (G-VONs) have been synthesized by mixing graphene oxide (GO) and V2O5suspensions at room temperature. In this process, V2O5nanowires (VONs) are formed spontaneously from commercial V2O5particles with the aid of GO. The as-formed one dimensional G-VONs were characterized by using a X-ray diffractometer, a X-ray photoelectron spectrometer, a scanning electron microscope, and a transmission electron microscope. GO plays a vital role in the VON formation with the simultaneous reduction of GO. A single G-VON showed superior electrical conductivity compared with that of the pure VONs obtained from the sol-gel method. This could be ascribed to the insertion of rGO sheets into the V2O5layered structure, which was further confirmed by electron energy loss spectroscopy. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher ROYAL SOC CHEMISTRY ko
dc.title Graphene oxide assisted spontaneous growth of V2O5 nanowires at room temperature ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84907159520 ko
dc.identifier.wosid 000342200100020 ko
dc.type.rims ART ko
dc.description.wostc 2 *
dc.description.scopustc 0 * 2015-05-06 * 2014-09-30 *
dc.identifier.doi 10.1039/c4nr01780c ko
dc.identifier.url ko
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