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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2833 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 2830 | - |
dc.citation.title | Physica Status Solidi (C) Current Topics in Solid State Physics | - |
dc.citation.volume | 0 | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Na, H | - |
dc.contributor.author | Seo, HC | - |
dc.contributor.author | Shin, Y | - |
dc.contributor.author | Kim, YW | - |
dc.contributor.author | Yoon, S | - |
dc.contributor.author | Oh, HJ | - |
dc.contributor.author | Sone, C | - |
dc.contributor.author | Park, Y | - |
dc.contributor.author | Sun, YP | - |
dc.contributor.author | Cho, YH | - |
dc.contributor.author | Yoon, E | - |
dc.date.accessioned | 2023-12-22T11:12:25Z | - |
dc.date.available | 2023-12-22T11:12:25Z | - |
dc.date.created | 2014-09-24 | - |
dc.date.issued | 2003-05 | - |
dc.description.abstract | We successfully grew In-rich InGaN/GaN single quantum well structures by metal-organic chemical vapor deposition and confirmed their formation by optical and structural measurements. Relatively high growth temperature (730 °C) for InGaN layer facilitated the formation of 2-dimensional quantum well structures, presumably due to high adatom mobility. As the growth interruption time increased, the PL emission efficiency from InGaN layer improved with peak position blue-shifted and the dislocation density decreased by one order of magnitude. The high resolution cross-sectional TEM images clearly showed that the In-rich InGaN layer thickness reduced from 2.5 nm (without GI) to about 1 nm (with 10 s GI) and the InGaN/GaN interface became very flat with 10 s GI. We suggest that decomposition and mass transport processes on InGaN during GI is responsible for these phenomena. | - |
dc.identifier.bibliographicCitation | Physica Status Solidi (C) Current Topics in Solid State Physics, v.0, no.7, pp.2830 - 2833 | - |
dc.identifier.doi | 10.1002/pssc.200303451 | - |
dc.identifier.issn | 1862-6351 | - |
dc.identifier.scopusid | 2-s2.0-20644440810 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6568 | - |
dc.identifier.wosid | 000189401700202 | - |
dc.language | 영어 | - |
dc.publisher | Wiley-VCH Verlag | - |
dc.title | Effect of growth interruption on In-rich InGaN/GaN single quantum well structures | - |
dc.type | Article | - |
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