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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 99 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 95 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 269 | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Na, H | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Seo, HC | - |
dc.contributor.author | Shin, Y | - |
dc.contributor.author | Lee, KH | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Oh, HJ | - |
dc.contributor.author | Yoon, S | - |
dc.contributor.author | Sone, C | - |
dc.contributor.author | Park, Y | - |
dc.contributor.author | Yoon, E | - |
dc.date.accessioned | 2023-12-22T10:44:43Z | - |
dc.date.available | 2023-12-22T10:44:43Z | - |
dc.date.created | 2014-09-24 | - |
dc.date.issued | 2004-08 | - |
dc.description.abstract | In-rich InGaN quantum dot structures were grown by metalorganic chemical vapor deposition. Growth at low temperature made possible the growth of InGaN layers of high In content (over 70 InN%) with negligible formation of In metal droplets. The density, average diameter and height of typical InGaN quantum dots (QDs) were estimated at 8 X 10(9)/cm(2), 80 and 1.2 nm, respectively. The emission wavelength from the QDs could be controlled to the near ultraviolet (UV) region by variation of the growth conditions. This work demonstrates that In-rich InGaN QD active layers are very promising device structures for application as UV light-emitting diodes. | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.269, no.1, pp.95 - 99 | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2004.05.039 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.scopusid | 2-s2.0-3342896681 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6553 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=3342896681 | - |
dc.identifier.wosid | 000223465200015 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Growth of In-rich InGaN/GaN quantum dots by metalorganic chemical vapor deposition | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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