File Download

There are no files associated with this item.

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

권순용

Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices Lab.
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

Author(s)
Kwon, Soon-YongCho, MHMoon, PKim, HJNa, HSeo, HCShin, YMoon, DWSun, YCho, YHYoon, E
Issued Date
2004-12
DOI
10.1002/pssa.200405076
URI
https://scholarworks.unist.ac.kr/handle/201301/6551
Fulltext
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=6344291258
Citation
PHYSICA STATUS SOLIDI (A) APPLIED RESEARCH, v.201, no.12, pp.2818 - 2822
Abstract
We grew high quality In-rich InGaN/GaN single quantum well (SQW) structures by metal-organic chemical vapor deposition using growth interruption and obtained a sharp photoluminescence peak in near-ultraviolet (UV) region. During In-rich InGaN well layer growth, only TMIn and ammonia were supplied, however, atomic interdiffusion as well as defect generation occurred to relieve large lattice mismatch over 10% between InN and GaN. From medium-energy ion scattering measurement and subsequent fitting of the spectrum, we could find that the InGaN well layer was In-rich and it has 60-70% indium content. We also found the compositional grading of indium at top and bottom InGaN/GaN interfaces. The Fourier series method was used to calculate the energy levels and envelope functions in In-rich InGaN/GaN SQW with compositional grading and we could quantitatively explain the near-UV emission observed from the SQW.
Publisher
John Wiley & Sons Ltd.
ISSN
0031-8965

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.