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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading

Cited 14 times inthomson ciCited 13 times inthomson ci
Title
Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading
Author
Kwon, Soon-YongCho, MHMoon, PKim, HJNa, HSeo, HCKim, HJShin, YMoon, DWSun, YCho, YHYoon, E
Keywords
FUNDAMENTAL-BAND GAP; INDIUM NITRIDE; DIFFUSION; GROWTH; GE
Issue Date
2004-12
Publisher
John Wiley & Sons Ltd.
Citation
PHYSICA STATUS SOLIDI (A) APPLIED RESEARCH, v.201, no.12, pp.2818 - 2822
Abstract
We grew high quality In-rich InGaN/GaN single quantum well (SQW) structures by metal-organic chemical vapor deposition using growth interruption and obtained a sharp photoluminescence peak in near-ultraviolet (UV) region. During In-rich InGaN well layer growth, only TMIn and ammonia were supplied, however, atomic interdiffusion as well as defect generation occurred to relieve large lattice mismatch over 10% between InN and GaN. From medium-energy ion scattering measurement and subsequent fitting of the spectrum, we could find that the InGaN well layer was In-rich and it has 60-70% indium content. We also found the compositional grading of indium at top and bottom InGaN/GaN interfaces. The Fourier series method was used to calculate the energy levels and envelope functions in In-rich InGaN/GaN SQW with compositional grading and we could quantitatively explain the near-UV emission observed from the SQW.
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DOI
10.1002/pssa.200405076
ISSN
0031-8965
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