Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading
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- Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading
- Kwon, Soon-Yong; Cho, MH; Moon, P; Kim, HJ; Na, H; Seo, HC; Kim, HJ; Shin, Y; Moon, DW; Sun, Y; Cho, YH; Yoon, E
- FUNDAMENTAL-BAND GAP; INDIUM NITRIDE; DIFFUSION; GROWTH; GE
- Issue Date
- John Wiley & Sons Ltd.
- PHYSICA STATUS SOLIDI (A) APPLIED RESEARCH, v.201, no.12, pp.2818 - 2822
- We grew high quality In-rich InGaN/GaN single quantum well (SQW) structures by metal-organic chemical vapor deposition using growth interruption and obtained a sharp photoluminescence peak in near-ultraviolet (UV) region. During In-rich InGaN well layer growth, only TMIn and ammonia were supplied, however, atomic interdiffusion as well as defect generation occurred to relieve large lattice mismatch over 10% between InN and GaN. From medium-energy ion scattering measurement and subsequent fitting of the spectrum, we could find that the InGaN well layer was In-rich and it has 60-70% indium content. We also found the compositional grading of indium at top and bottom InGaN/GaN interfaces. The Fourier series method was used to calculate the energy levels and envelope functions in In-rich InGaN/GaN SQW with compositional grading and we could quantitatively explain the near-UV emission observed from the SQW.
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