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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2822 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 2818 | - |
dc.citation.title | PHYSICA STATUS SOLIDI (A) APPLIED RESEARCH | - |
dc.citation.volume | 201 | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Cho, MH | - |
dc.contributor.author | Moon, P | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Na, H | - |
dc.contributor.author | Seo, HC | - |
dc.contributor.author | Shin, Y | - |
dc.contributor.author | Moon, DW | - |
dc.contributor.author | Sun, Y | - |
dc.contributor.author | Cho, YH | - |
dc.contributor.author | Yoon, E | - |
dc.date.accessioned | 2023-12-22T10:40:54Z | - |
dc.date.available | 2023-12-22T10:40:54Z | - |
dc.date.created | 2014-09-24 | - |
dc.date.issued | 2004-12 | - |
dc.description.abstract | We grew high quality In-rich InGaN/GaN single quantum well (SQW) structures by metal-organic chemical vapor deposition using growth interruption and obtained a sharp photoluminescence peak in near-ultraviolet (UV) region. During In-rich InGaN well layer growth, only TMIn and ammonia were supplied, however, atomic interdiffusion as well as defect generation occurred to relieve large lattice mismatch over 10% between InN and GaN. From medium-energy ion scattering measurement and subsequent fitting of the spectrum, we could find that the InGaN well layer was In-rich and it has 60-70% indium content. We also found the compositional grading of indium at top and bottom InGaN/GaN interfaces. The Fourier series method was used to calculate the energy levels and envelope functions in In-rich InGaN/GaN SQW with compositional grading and we could quantitatively explain the near-UV emission observed from the SQW. | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI (A) APPLIED RESEARCH, v.201, no.12, pp.2818 - 2822 | - |
dc.identifier.doi | 10.1002/pssa.200405076 | - |
dc.identifier.issn | 0031-8965 | - |
dc.identifier.scopusid | 2-s2.0-6344291258 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6551 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=6344291258 | - |
dc.identifier.wosid | 000224218000046 | - |
dc.language | 영어 | - |
dc.publisher | John Wiley & Sons Ltd. | - |
dc.title | Near-UV emission from In-rich InGaN/GaN single quantum well structure with compositional grading | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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