Full metadata record
DC Field | Value | Language |
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dc.citation.number | 1 | - |
dc.citation.startPage | 4747 | - |
dc.citation.title | NATURE COMMUNICATIONS | - |
dc.citation.volume | 14 | - |
dc.contributor.author | Song, Seunguk | - |
dc.contributor.author | Yoon, Aram | - |
dc.contributor.author | Jang, Sora | - |
dc.contributor.author | Lynch, Jason | - |
dc.contributor.author | Yang, Jihoon | - |
dc.contributor.author | Han, Juwon | - |
dc.contributor.author | Choe, Myeonggi | - |
dc.contributor.author | Jin, Young Ho | - |
dc.contributor.author | Chen, Cindy Yueli | - |
dc.contributor.author | Cheon, Yeryun | - |
dc.contributor.author | Kwak, Jinsung | - |
dc.contributor.author | Jeong, Changwook | - |
dc.contributor.author | Cheong, Hyeonsik | - |
dc.contributor.author | Jariwala, Deep | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.date.accessioned | 2023-12-21T11:47:10Z | - |
dc.date.available | 2023-12-21T11:47:10Z | - |
dc.date.created | 2023-09-07 | - |
dc.date.issued | 2023-08 | - |
dc.description.abstract | High-performance p-type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p-type 2Dsemiconductors and a suitablemetallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p-type 2D single-crystalline 2H-MoTe2 transistor arrays with Fermi-level-tuned 1T'-phase semimetal contact electrodes. By transforming polycrystalline 1T'-MoTe2 to 2H polymorph via abnormal grain growth, we fabricated 4-inch 2H-MoTe2 wafers with ultra-large single-crystalline domains and spatially-controlled singlecrystalline arrays at a low temperature (similar to 500 degrees C). Furthermore, we demonstrate on-chip transistors by lithographic patterning and layer-by-layer integration of 1T' semimetals and 2H semiconductors. Work function modulation of 1T'-MoTe2 electrodes was achieved by depositing 3D metal (Au) pads, resulting in minimal contact resistance (similar to 0.7 k Omega.mu m) and near-zero Schottky barrier height (similar to 14meV) of the junction interface, and leading to high on-state current (similar to 7.8 mu A/mu m) and on/off current ratio (similar to 105) in the 2H-MoTe2 transistors. | - |
dc.identifier.bibliographicCitation | NATURE COMMUNICATIONS, v.14, no.1, pp.4747 | - |
dc.identifier.doi | 10.1038/s41467-023-40448-x | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.scopusid | 2-s2.0-85166785562 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65427 | - |
dc.identifier.wosid | 001169699000004 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FEW-LAYER MOTE2 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | OPTICAL-PARAMETERS | - |
dc.subject.keywordPlus | CONTACT RESISTANCE | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | DEFECTS | - |
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