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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells

Cited 31 times inthomson ciCited 31 times inthomson ci
Title
Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells
Author
Kwon, Soon-YongBaik, SIKim, YWKim, HJKo, DSYoon, EYoon, JWCheong, HPark, YS
Keywords
LIGHT-EMITTING-DIODES; LUMINESCENCE; GROWTH; GAN
Issue Date
2005-05
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.86, no.19, pp.1 - 3
Abstract
We grew In-rich InGaNGaN multiple quantum wells (MQWs) using growth interruption (GI) by metalorganic chemical vapor deposition. The quality of overgrown InGaNGaN QW layers in MQWs was largely affected by the crystalline quality and interfacial abruptness of the underlying QW layer. Introduction of 10 s GI was very effective in improving the crystalline quality and interfacial abruptness of InGaN QW layers, and we grew a ten periods of 1-nm -thick In-rich InGaNGaN MQW with 10 s GI and obtained a strong near-ultraviolet (UV) emission (~390 nm) at room temperature. We believe that use of less than 1-nm -thick In-rich InGaN MQW can be a candidate for near-UV source, which might replace the conventional low-indium content (<10%), thicker InGaN QW layer.
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DOI
10.1063/1.1923177
ISSN
0003-6951
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