Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells
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- Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells
- Kwon, Soon-Yong; Baik, SI; Kim, YW; Kim, HJ; Ko, DS; Yoon, E; Yoon, JW; Cheong, H; Park, YS
- LIGHT-EMITTING-DIODES; LUMINESCENCE; GROWTH; GAN
- Issue Date
- AMER INST PHYSICS
- APPLIED PHYSICS LETTERS, v.86, no.19, pp.1 - 3
- We grew In-rich InGaNGaN multiple quantum wells (MQWs) using growth interruption (GI) by metalorganic chemical vapor deposition. The quality of overgrown InGaNGaN QW layers in MQWs was largely affected by the crystalline quality and interfacial abruptness of the underlying QW layer. Introduction of 10 s GI was very effective in improving the crystalline quality and interfacial abruptness of InGaN QW layers, and we grew a ten periods of 1-nm -thick In-rich InGaNGaN MQW with 10 s GI and obtained a strong near-ultraviolet (UV) emission (~390 nm) at room temperature. We believe that use of less than 1-nm -thick In-rich InGaN MQW can be a candidate for near-UV source, which might replace the conventional low-indium content (<10%), thicker InGaN QW layer.
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