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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells

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dc.contributor.author Kwon, Soon-Yong ko
dc.contributor.author Baik, SI ko
dc.contributor.author Kim, YW ko
dc.contributor.author Kim, HJ ko
dc.contributor.author Ko, DS ko
dc.contributor.author Yoon, E ko
dc.contributor.author Yoon, JW ko
dc.contributor.author Cheong, H ko
dc.contributor.author Park, YS ko
dc.date.available 2014-09-29T01:35:12Z -
dc.date.created 2014-09-24 ko
dc.date.issued 2005-05 -
dc.identifier.citation APPLIED PHYSICS LETTERS, v.86, no.19, pp.1 - 3 ko
dc.identifier.issn 0003-6951 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/6540 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=20844457614 ko
dc.description.abstract We grew In-rich InGaNGaN multiple quantum wells (MQWs) using growth interruption (GI) by metalorganic chemical vapor deposition. The quality of overgrown InGaNGaN QW layers in MQWs was largely affected by the crystalline quality and interfacial abruptness of the underlying QW layer. Introduction of 10 s GI was very effective in improving the crystalline quality and interfacial abruptness of InGaN QW layers, and we grew a ten periods of 1-nm -thick In-rich InGaNGaN MQW with 10 s GI and obtained a strong near-ultraviolet (UV) emission (~390 nm) at room temperature. We believe that use of less than 1-nm -thick In-rich InGaN MQW can be a candidate for near-UV source, which might replace the conventional low-indium content (<10%), thicker InGaN QW layer. ko
dc.description.statementofresponsibility open -
dc.language ENG ko
dc.publisher AMER INST PHYSICS ko
dc.subject LIGHT-EMITTING-DIODES ko
dc.subject LUMINESCENCE ko
dc.subject GROWTH ko
dc.subject GAN ko
dc.title Room temperature near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-20844457614 ko
dc.identifier.wosid 000229397900040 ko
dc.type.rims ART ko
dc.description.wostc 31 *
dc.description.scopustc 31 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-09-24 *
dc.identifier.doi 10.1063/1.1923177 ko
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