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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties

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Title
Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties
Author
Kwon, Soon-YongKim, HJNa, HKim, YWSeo, HCKim, HJShin, YYoon, ESun, YCho, YHYoon, JWCheong, HM
Keywords
Growth interruption (GI); In-rich InGaN; MOCVD; Quantum dot (QD); Quantum well (QW)
Issue Date
2005-06
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, no., pp.S130 - S133
Abstract
In-rich InGaN/GaN nanostructures such as quantum wells (QWs) and quantum dots (QDs) were successfully grown by metal-organic chemical vapor deposition and their optical properties were investigated. Introduction of a relatively high growth temperature made it possible to grow In-rich InGaN/GaN QWs and growth interruption (GI) was effectively used to control their structural and optical properties. From In-rich InGaN/GaN QW structures grown without GI, enhanced thermal stability appeared in optical properties and thickness fluctuation in In-rich InGaN QWs could give intrinsic QD-like carrier localization centers. To enhance thermal characteristics, artificial formation of In-rich InGaN/GaN QDs was done at a relatively lower growth temperature than that of QWs. From In-rich InGaN/GaN QDs, we could obtain high efficiency ultraviolet emission at room temperature.
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ISSN
0374-4884
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