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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | S133 | - |
dc.citation.startPage | S130 | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 46 | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Na, H | - |
dc.contributor.author | Kim, YW | - |
dc.contributor.author | Seo, HC | - |
dc.contributor.author | Shin, Y | - |
dc.contributor.author | Yoon, E | - |
dc.contributor.author | Sun, Y | - |
dc.contributor.author | Cho, YH | - |
dc.contributor.author | Yoon, JW | - |
dc.contributor.author | Cheong, HM | - |
dc.date.accessioned | 2023-12-22T10:36:27Z | - |
dc.date.available | 2023-12-22T10:36:27Z | - |
dc.date.created | 2014-09-24 | - |
dc.date.issued | 2005-06 | - |
dc.description.abstract | In-rich InGaN/GaN nanostructures such as quantum wells (QWs) and quantum dots (QDs) were successfully grown by metal-organic chemical vapor deposition and their optical properties were investigated. Introduction of a relatively high growth temperature made it possible to grow In-rich InGaN/GaN QWs and growth interruption (GI) was effectively used to control their structural and optical properties. From In-rich InGaN/GaN QW structures grown without GI, enhanced thermal stability appeared in optical properties and thickness fluctuation in In-rich InGaN QWs could give intrinsic QD-like carrier localization centers. To enhance thermal characteristics, artificial formation of In-rich InGaN/GaN QDs was done at a relatively lower growth temperature than that of QWs. From In-rich InGaN/GaN QDs, we could obtain high efficiency ultraviolet emission at room temperature. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.S130 - S133 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.scopusid | 2-s2.0-20644465175 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6538 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=20644465175 | - |
dc.identifier.wosid | 000229589900031 | - |
dc.language | 영어 | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Growth of in-rich InGaN/GaN nanostructures by metal-organic chemical vapor deposition and their optical properties | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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