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- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
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Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy
- Author(s)
- Kim, EK, Kim, JS, Kwon, Soon-Yong, Kim, HJ, Yoon, E
- Issued Date
- 2005-07
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.7B, pp.5670 - 5672
- Abstract
- The use of deep level transient spectroscopy (DLTS) for the analysis of energy band of InGaN/GaN self assembled quantum dots (QDs) was described. The QDs were grown on Al2O3 substrates by self-assembled method using metal-organic chemical vapor deposition system. The density of the QDs was found to be 7.0 × 109 cm-2, which was confirmed by atomic force microscope measurement. From the Arrhenius plot, the apparent activation energy and the emission cross section by the carrier emission process of QD-related levels were extracted 0.37 eV from the conduction band edge and 1.13 × 10-16 cm2, respectively.
- Publisher
- JAPAN SOC APPLIED PHYSICS
- ISSN
- 0021-4922
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