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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy

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Title
Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy
Author
Kim, EKKim, JSKwon, Soon-YongKim, HJYoon, E
Keywords
deep-level transient spectroscopy; quantum dot; energy level; InGaN; GaN; capture barrier
Issue Date
2005-07
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.7B, pp.5670 - 5672
Abstract
The use of deep level transient spectroscopy (DLTS) for the analysis of energy band of InGaN/GaN self assembled quantum dots (QDs) was described. The QDs were grown on Al2O3 substrates by self-assembled method using metal-organic chemical vapor deposition system. The density of the QDs was found to be 7.0 × 109 cm-2, which was confirmed by atomic force microscope measurement. From the Arrhenius plot, the apparent activation energy and the emission cross section by the carrier emission process of QD-related levels were extracted 0.37 eV from the conduction band edge and 1.13 × 10-16 cm2, respectively.
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DOI
10.1143/JJAP.44.5670
ISSN
0021-4922
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MSE_Journal Papers
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