File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 5672 | - |
| dc.citation.number | 7B | - |
| dc.citation.startPage | 5670 | - |
| dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
| dc.citation.volume | 44 | - |
| dc.contributor.author | Kim, EK | - |
| dc.contributor.author | Kim, JS | - |
| dc.contributor.author | Kwon, Soon-Yong | - |
| dc.contributor.author | Kim, HJ | - |
| dc.contributor.author | Yoon, E | - |
| dc.date.accessioned | 2023-12-22T10:36:09Z | - |
| dc.date.available | 2023-12-22T10:36:09Z | - |
| dc.date.created | 2014-09-24 | - |
| dc.date.issued | 2005-07 | - |
| dc.description.abstract | The use of deep level transient spectroscopy (DLTS) for the analysis of energy band of InGaN/GaN self assembled quantum dots (QDs) was described. The QDs were grown on Al2O3 substrates by self-assembled method using metal-organic chemical vapor deposition system. The density of the QDs was found to be 7.0 × 109 cm-2, which was confirmed by atomic force microscope measurement. From the Arrhenius plot, the apparent activation energy and the emission cross section by the carrier emission process of QD-related levels were extracted 0.37 eV from the conduction band edge and 1.13 × 10-16 cm2, respectively. | - |
| dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.7B, pp.5670 - 5672 | - |
| dc.identifier.doi | 10.1143/JJAP.44.5670 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.scopusid | 2-s2.0-23244464985 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6537 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=23244464985 | - |
| dc.identifier.wosid | 000232029300079 | - |
| dc.language | 영어 | - |
| dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
| dc.title | Study on energy band of InGaN/GaN self-assembled quantum dots by deep level transient spectroscopy | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.