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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Strong room-temperature near-ultraviolet emission from In-rich InGaN/GaN nanostructures grown by metalorganic chemical vapor deposition

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Title
Strong room-temperature near-ultraviolet emission from In-rich InGaN/GaN nanostructures grown by metalorganic chemical vapor deposition
Author
Kwon, Soon-YongKim, HJKim, YWYoon, E
Keywords
In-rich InGaN; MOCVD; Near-UV; Quantum dot (QD); Quantum well (QW)
Issue Date
2005-10
Publisher
JAPAN SOC APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.10, pp.7217 - 7220
Abstract
We report the successful growth of In-rich InGaN/GaN nanostructures such as multiple quantum wells (MQWs) and quantum dots (QDs) by metalorganic chemical vapor deposition (MOCVD). Introduction of a relatively high growth temperature (730°C) made it possible to grow In-rich InGaN/GaN QWs, and growth interruption (GI) was effectively used to improve the structural and optical properties of the QWs. To enhance thermal characteristics, an artificial formation of In-rich InGaN/GaN QDs was made at a relatively lower growth temperature (650°C) than that of QWs. The well width of the In-rich InGaN/GaN QWs and the dot height of the In-rich InGaN/GaN QDs were both approximately 1 nm, and we obtained strong room-temperature near-ultraviolet (UV) emission from these In-rich InGaN/GaN nanostructures. This strongly suggests that ultrathin In-rich InGaN nanostructures can be a new candidate for a near-UV source, which might replace the conventional low-indium-content (<10%), thicker InGaN QW.
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DOI
10.1143/JJAP.44.7217
ISSN
0021-4922
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MSE_Journal Papers
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