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DC Field | Value | Language |
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dc.citation.endPage | 7220 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 7217 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | - |
dc.citation.volume | 44 | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Kim, HJ | - |
dc.contributor.author | Kim, YW | - |
dc.contributor.author | Yoon, E | - |
dc.date.accessioned | 2023-12-22T10:12:33Z | - |
dc.date.available | 2023-12-22T10:12:33Z | - |
dc.date.created | 2014-09-24 | - |
dc.date.issued | 2005-10 | - |
dc.description.abstract | We report the successful growth of In-rich InGaN/GaN nanostructures such as multiple quantum wells (MQWs) and quantum dots (QDs) by metalorganic chemical vapor deposition (MOCVD). Introduction of a relatively high growth temperature (730°C) made it possible to grow In-rich InGaN/GaN QWs, and growth interruption (GI) was effectively used to improve the structural and optical properties of the QWs. To enhance thermal characteristics, an artificial formation of In-rich InGaN/GaN QDs was made at a relatively lower growth temperature (650°C) than that of QWs. The well width of the In-rich InGaN/GaN QWs and the dot height of the In-rich InGaN/GaN QDs were both approximately 1 nm, and we obtained strong room-temperature near-ultraviolet (UV) emission from these In-rich InGaN/GaN nanostructures. This strongly suggests that ultrathin In-rich InGaN nanostructures can be a new candidate for a near-UV source, which might replace the conventional low-indium-content (<10%), thicker InGaN QW. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.10, pp.7217 - 7220 | - |
dc.identifier.doi | 10.1143/JJAP.44.7217 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-31544433130 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6530 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=31544433130 | - |
dc.identifier.wosid | 000232739300004 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Strong room-temperature near-ultraviolet emission from In-rich InGaN/GaN nanostructures grown by metalorganic chemical vapor deposition | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | In-rich InGaN | - |
dc.subject.keywordAuthor | quantum well (QW) | - |
dc.subject.keywordAuthor | quantum dot (QD) | - |
dc.subject.keywordAuthor | near-UV | - |
dc.subject.keywordAuthor | MOCVD | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | QUANTUM DOTS | - |
dc.subject.keywordPlus | EXCITON LOCALIZATION | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | WELLS | - |
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