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Kim, Jin Young
Next Generation Energy Laboratory
Research Interests
  • Polymer solar cells, QD solar cells, organic-inorganic hybrid solar cells, perovskite solar cells, OLEDs, PeLEDs, organic FETs

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Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene

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Title
Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene
Author
Cho, ShinukYuen, JonathanKim, Jin YoungLee, KwangheeHeeger, Alan J.
Keywords
Butyric acid; Methyl esters; Thermal annealing
Issue Date
2006
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.89, no.15, pp.1 - 3
Abstract
Organic field-effect transistors (FETs) with equivalent hole and electron mobilities have been demonstrated. The devices were fabricated using a phase separated mixture of regioregular poly(3-hexylthiophene) and [6,6]-phenyl C-61-butyric acid methyl ester as the active layer and using aluminum (Al) for the source and drain electrodes. Measurements of the source-drain current versus gate voltage gave an electron mobility of mu(e)=2.0x10(-3) cm(2)/V s and hole mobility of mu(h)=1.7x10(-3)cm(2)/V s. The ambipolar FET properties arise from the use of Al electrodes for the source and drain; the contacts between the Al electrodes and the active layer are improved by thermal annealing at elevated temperatures (150 degrees C), thereby enabling balanced injection for both holes and electrons in a single device.
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DOI
10.1063/1.2361269
ISSN
0003-6951
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ECHE_Journal Papers
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