Ambipolar organic field-effect transistors fabricated using a composite of semiconducting polymer and soluble fullerene

Abstract

Organic field-effect transistors (FETs) with equivalent hole and electron mobilities have been demonstrated. The devices were fabricated using a phase separated mixture of regioregular poly(3-hexylthiophene) and [6,6]-phenyl C-61-butyric acid methyl ester as the active layer and using aluminum (Al) for the source and drain electrodes. Measurements of the source-drain current versus gate voltage gave an electron mobility of mu(e)=2.0x10(-3) cm(2)/V s and hole mobility of mu(h)=1.7x10(-3)cm(2)/V s. The ambipolar FET properties arise from the use of Al electrodes for the source and drain; the contacts between the Al electrodes and the active layer are improved by thermal annealing at elevated temperatures (150 degrees C), thereby enabling balanced injection for both holes and electrons in a single device.