The electronic structures of In-Rich InGaN quantum well
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- The electronic structures of In-Rich InGaN quantum well
- Moon, Pilkyung; Kim, Hee Jin; Kwon, Soon-Yong; Yoon, Euijoon; Park, Seoung-Hwan; Leburton, Jean-Pierre
- In-rich InGaN quantum well; Kp method; Piezoelectric effect; Strain relaxation; Valence band offset
- Issue Date
- American Institute of Physics Inc.
- AIP Conference Proceedings, v.893, no., pp.391 - 392
- We investigated the electronic structures of thin In-rich InGaN quantum well (QW) using an eight-band k center dot p method which includes the effects of strain and piezoelectric field. We compared two different valence band offsets (VBOs) reported in literatures: 0.48 eV and 1.05 eV. Also we investigated the effects of strain relaxation and Indium composition of InGaN layer and proved the accuracy of MEIS result.
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