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- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
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The electronic structures of In-Rich InGaN quantum well
- Author(s)
- Moon, Pilkyung, Kim, Hee Jin, Kwon, Soon-Yong, Yoon, Euijoon, Park, Seoung-Hwan, Leburton, Jean-Pierre
- Issued Date
- 2007
- Citation
- AIP Conference Proceedings, v.893, pp.391 - 392
- Abstract
- We investigated the electronic structures of thin In-rich InGaN quantum well (QW) using an eight-band k center dot p method which includes the effects of strain and piezoelectric field. We compared two different valence band offsets (VBOs) reported in literatures: 0.48 eV and 1.05 eV. Also we investigated the effects of strain relaxation and Indium composition of InGaN layer and proved the accuracy of MEIS result.
- Publisher
- American Institute of Physics Inc.
- ISSN
- 1551-7616
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