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- Kwon, Soon-Yong
- Frontier, Innovative Nanomaterials & Devices Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 392 | - |
| dc.citation.startPage | 391 | - |
| dc.citation.title | AIP Conference Proceedings | - |
| dc.citation.volume | 893 | - |
| dc.contributor.author | Moon, Pilkyung | - |
| dc.contributor.author | Kim, Hee Jin | - |
| dc.contributor.author | Kwon, Soon-Yong | - |
| dc.contributor.author | Yoon, Euijoon | - |
| dc.contributor.author | Park, Seoung-Hwan | - |
| dc.contributor.author | Leburton, Jean-Pierre | - |
| dc.date.accessioned | 2023-12-22T09:38:20Z | - |
| dc.date.available | 2023-12-22T09:38:20Z | - |
| dc.date.created | 2014-09-24 | - |
| dc.date.issued | 2007 | - |
| dc.description.abstract | We investigated the electronic structures of thin In-rich InGaN quantum well (QW) using an eight-band k center dot p method which includes the effects of strain and piezoelectric field. We compared two different valence band offsets (VBOs) reported in literatures: 0.48 eV and 1.05 eV. Also we investigated the effects of strain relaxation and Indium composition of InGaN layer and proved the accuracy of MEIS result. | - |
| dc.identifier.bibliographicCitation | AIP Conference Proceedings, v.893, pp.391 - 392 | - |
| dc.identifier.doi | 10.1063/1.2729930 | - |
| dc.identifier.issn | 1551-7616 | - |
| dc.identifier.scopusid | 2-s2.0-41549132682 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6500 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=41549132682 | - |
| dc.identifier.wosid | 000246281800190 | - |
| dc.language | 영어 | - |
| dc.publisher | American Institute of Physics Inc. | - |
| dc.title | The electronic structures of In-Rich InGaN quantum well | - |
| dc.type | Article | - |
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