2D fin field-effect transistors integrated with epitaxial high-k gate oxide

Abstract

Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k) gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for developing ultrascaled transistors(1-5), but has proved challenging. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single-crystal high-k gate oxide Bi2SeO5 are epitaxially integrated. These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2 nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (mu) up to 270 cm2 V-1 s(-1), ultralow off-state current (I-OFF) down to about 1 pA mu m(-1), high on/off current ratios (I-ON/I-OFF) up to 10(8) and high on-state current (I-ON) up to 830 mu A mu m(-1) at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)(6). The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of Moore's law.