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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 72 | - |
dc.citation.number | 7955 | - |
dc.citation.startPage | 66 | - |
dc.citation.title | NATURE | - |
dc.citation.volume | 616 | - |
dc.contributor.author | Tan, Congwei | - |
dc.contributor.author | Yu, Mengshi | - |
dc.contributor.author | Tang, Junchuan | - |
dc.contributor.author | Gao, Xiaoyin | - |
dc.contributor.author | Yin, Yuling | - |
dc.contributor.author | Zhang, Yichi | - |
dc.contributor.author | Wang, Jingyue | - |
dc.contributor.author | Gao, Xinyu | - |
dc.contributor.author | Zhang, Congcong | - |
dc.contributor.author | Zhou, Xuehan | - |
dc.contributor.author | Zheng, Liming | - |
dc.contributor.author | Liu, Hongtao | - |
dc.contributor.author | Jiang, Kaili | - |
dc.contributor.author | Ding, Feng | - |
dc.contributor.author | Peng, Hailin | - |
dc.date.accessioned | 2023-12-21T12:42:31Z | - |
dc.date.available | 2023-12-21T12:42:31Z | - |
dc.date.created | 2023-05-08 | - |
dc.date.issued | 2023-04 | - |
dc.description.abstract | Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k) gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for developing ultrascaled transistors(1-5), but has proved challenging. Here we report the epitaxial synthesis of vertically aligned arrays of 2D fin-oxide heterostructures, a new class of 3D architecture in which high-mobility 2D semiconductor fin Bi2O2Se and single-crystal high-k gate oxide Bi2SeO5 are epitaxially integrated. These 2D fin-oxide epitaxial heterostructures have atomically flat interfaces and ultrathin fin thickness down to one unit cell (1.2 nm), achieving wafer-scale, site-specific and high-density growth of mono-oriented arrays. The as-fabricated 2D fin field-effect transistors (FinFETs) based on Bi2O2Se/Bi2SeO5 epitaxial heterostructures exhibit high electron mobility (mu) up to 270 cm2 V-1 s(-1), ultralow off-state current (I-OFF) down to about 1 pA mu m(-1), high on/off current ratios (I-ON/I-OFF) up to 10(8) and high on-state current (I-ON) up to 830 mu A mu m(-1) at 400-nm channel length, which meet the low-power specifications projected by the International Roadmap for Devices and Systems (IRDS)(6). The 2D fin-oxide epitaxial heterostructures open up new avenues for the further extension of Moore's law. | - |
dc.identifier.bibliographicCitation | NATURE, v.616, no.7955, pp.66 - 72 | - |
dc.identifier.doi | 10.1038/s41586-023-05797-z | - |
dc.identifier.issn | 0028-0836 | - |
dc.identifier.scopusid | 2-s2.0-85150733225 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64251 | - |
dc.identifier.wosid | 001168998000014 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | 2D fin field-effect transistors integrated with epitaxial high-k gate oxide | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIALS | - |
dc.subject.keywordPlus | MOORES LAW | - |
dc.subject.keywordPlus | MOBILITY | - |
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