ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.11, pp.D103 - D106
Abstract
Cu nanowires are directly patterned on W diffusion barrier surface by electrodeposition without using any template. Prior to Cu nanowire growth, a photoresist (PR) film coated over the W surface was mechanically patterned in a random manner with atomic force microscope (AFM) tip. Polycrystalline Cu nanowires in the shape of beaded string were electrochemically formed along line patterns on the W surface. This new approach of Cu nanowire synthesis suggests the feasibility of fabricating Cu interconnects for Si-based electronic devices by direct Cu nanowire patterning. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.024111esl] All rights reserved.