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Kim, Soo-Hyun
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Fabrication of single-phase SnS film by H-2 annealing of amorphous SnSx prepared by atomic layer deposition

Author(s)
Jang, ByeonghyeonYeo, SeungminKim, HyungjunShin, ByunghaKim, Soo-Hyun
Issued Date
2017-05
DOI
10.1116/1.4978892
URI
https://scholarworks.unist.ac.kr/handle/201301/64096
Fulltext
https://avs.scitation.org/doi/10.1116/1.4978892
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.35, no.3
Abstract
This study evaluated a simple and novel route to fabricate single-phase SnS thin films, consisting of the growth of smooth amorphous SnS2 films by atomic layer deposition at very low temperature using tetrakis(dimethylamino) tin {TDMASn, [(CH3)(2)N](4)Sn} and hydrogen sulfide followed by H-2 annealing at controlled higher temperatures. The properties of the SnS films fabricated by subjecting the amorphous as-grown SnS2 films deposited at 100 degrees C to post-H-2 annealing at 360 degrees C were superior to those of the as-grown SnS films deposited at 200 degrees C in terms of their phase purity, optical band gap, adhesion, and surface roughness. Raman spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and atomic force microscopy consistently showed that single-phase, stoichiometric crystalline (orthorhombic structure) SnS films (Sn/S ratio: similar to 1), without any incorporated sulfur-rich tin sulfides, could be fabricated with a very low surface roughness [root mean square (RMS) roughness: similar to 7 nm] using the proposed scheme. On the other hand, the as-grown SnS film at 200 degrees C still contained a small amount of SnS2 phase and its RMS surface roughness was as high as 16 nm. The optical band gap of the as-grown SnS film was 1.85 eV, whereas that of the annealed SnS film was similar to 1.2 eV, confirming the latter's improved phase purity. The SnS film fabricated by H-2 annealing was a p-type semiconductor with a carrier concentration of similar to 2.3 x 10(16)/cm(3) and a hole mobility of similar to 15 cm(2)/Vs. The present scheme to prepare high-quality SnS films might be useful for fabricating photovoltaic or solar conversion devices. (C) 2017 American Vacuum Society.
Publisher
A V S AMER INST PHYSICS
ISSN
0734-2101
Keyword
SULFIDE THIN-FILMSTIN SULFIDEPRECURSORSELECTRODEPOSITIONPOLYMORPHHYDROGEN

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