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DC Field | Value | Language |
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dc.citation.number | 3 | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 35 | - |
dc.contributor.author | Jang, Byeonghyeon | - |
dc.contributor.author | Yeo, Seungmin | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.contributor.author | Shin, Byungha | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-21T22:13:04Z | - |
dc.date.available | 2023-12-21T22:13:04Z | - |
dc.date.created | 2022-12-23 | - |
dc.date.issued | 2017-05 | - |
dc.description.abstract | This study evaluated a simple and novel route to fabricate single-phase SnS thin films, consisting of the growth of smooth amorphous SnS2 films by atomic layer deposition at very low temperature using tetrakis(dimethylamino) tin {TDMASn, [(CH3)(2)N](4)Sn} and hydrogen sulfide followed by H-2 annealing at controlled higher temperatures. The properties of the SnS films fabricated by subjecting the amorphous as-grown SnS2 films deposited at 100 degrees C to post-H-2 annealing at 360 degrees C were superior to those of the as-grown SnS films deposited at 200 degrees C in terms of their phase purity, optical band gap, adhesion, and surface roughness. Raman spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and atomic force microscopy consistently showed that single-phase, stoichiometric crystalline (orthorhombic structure) SnS films (Sn/S ratio: similar to 1), without any incorporated sulfur-rich tin sulfides, could be fabricated with a very low surface roughness [root mean square (RMS) roughness: similar to 7 nm] using the proposed scheme. On the other hand, the as-grown SnS film at 200 degrees C still contained a small amount of SnS2 phase and its RMS surface roughness was as high as 16 nm. The optical band gap of the as-grown SnS film was 1.85 eV, whereas that of the annealed SnS film was similar to 1.2 eV, confirming the latter's improved phase purity. The SnS film fabricated by H-2 annealing was a p-type semiconductor with a carrier concentration of similar to 2.3 x 10(16)/cm(3) and a hole mobility of similar to 15 cm(2)/Vs. The present scheme to prepare high-quality SnS films might be useful for fabricating photovoltaic or solar conversion devices. (C) 2017 American Vacuum Society. | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.35, no.3 | - |
dc.identifier.doi | 10.1116/1.4978892 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.scopusid | 2-s2.0-85059244408 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64096 | - |
dc.identifier.url | https://avs.scitation.org/doi/10.1116/1.4978892 | - |
dc.identifier.wosid | 000401122700028 | - |
dc.language | 영어 | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Fabrication of single-phase SnS film by H-2 annealing of amorphous SnSx prepared by atomic layer deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | SULFIDE THIN-FILMS | - |
dc.subject.keywordPlus | TIN SULFIDE | - |
dc.subject.keywordPlus | PRECURSORS | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | POLYMORPH | - |
dc.subject.keywordPlus | HYDROGEN | - |
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