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Kwon, Jimin
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Parylene copolymer gate dielectrics for organic field- effect transistors

Author(s)
Park, HyunjinKwon, JiminAhn, HyungjuJung, Sungjune
Issued Date
2019-06
DOI
10.1039/c8tc06267f
URI
https://scholarworks.unist.ac.kr/handle/201301/59191
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.7, no.21, pp.6251 - 6256
Abstract
A double-layer gate dielectric has been used to overcome the drawbacks of organic field-effect transistors with a single-layer gate dielectric. However, the double-layered dielectrics require additional fabrication processes, resulting in increasedmanufacturing cost and complexity. Here, we present parylene copolymer gate dielectrics fabricated by in situ codeposition of two different families, parylene C and parylene F while maintaining double-layer structures. The effect of the copolymer dielectric on device performance is systematically investigated by evaluating dielectric properties and electrical characteristics. The results show that an organic transistor with a codeposited parylene dielectric exhibits high performance and stable operation without increasing the manufacturing complexity.
Publisher
ROYAL SOC CHEMISTRY
ISSN
2050-7526
Keyword
THRESHOLD VOLTAGE SHIFTSTHIN-FILM TRANSISTORSRELATIVE PERMITTIVITYHIGH-PERFORMANCEPENTACENEDESIGN

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