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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 6256 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 6251 | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY C | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Park, Hyunjin | - |
dc.contributor.author | Kwon, Jimin | - |
dc.contributor.author | Ahn, Hyungju | - |
dc.contributor.author | Jung, Sungjune | - |
dc.date.accessioned | 2023-12-21T19:06:45Z | - |
dc.date.available | 2023-12-21T19:06:45Z | - |
dc.date.created | 2022-08-29 | - |
dc.date.issued | 2019-06 | - |
dc.description.abstract | A double-layer gate dielectric has been used to overcome the drawbacks of organic field-effect transistors with a single-layer gate dielectric. However, the double-layered dielectrics require additional fabrication processes, resulting in increasedmanufacturing cost and complexity. Here, we present parylene copolymer gate dielectrics fabricated by in situ codeposition of two different families, parylene C and parylene F while maintaining double-layer structures. The effect of the copolymer dielectric on device performance is systematically investigated by evaluating dielectric properties and electrical characteristics. The results show that an organic transistor with a codeposited parylene dielectric exhibits high performance and stable operation without increasing the manufacturing complexity. | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY C, v.7, no.21, pp.6251 - 6256 | - |
dc.identifier.doi | 10.1039/c8tc06267f | - |
dc.identifier.issn | 2050-7526 | - |
dc.identifier.scopusid | 2-s2.0-85066435917 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/59191 | - |
dc.identifier.wosid | 000470700000008 | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Parylene copolymer gate dielectrics for organic field- effect transistors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | THRESHOLD VOLTAGE SHIFTS | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | RELATIVE PERMITTIVITY | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | DESIGN | - |
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