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권지민

Kwon, Jimin
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Bistaggered Contact Geometry for Symmetric Dual-Gate Organic TFTs

Author(s)
Kwon, JiminJung, SungyeopKim, Yun-HiJung, Sungjune
Issued Date
2019-07
DOI
10.1109/TED.2019.2917013
URI
https://scholarworks.unist.ac.kr/handle/201301/59190
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.7, pp.3118 - 3123
Abstract
This transaction proposes a symmetric bistaggered dual-gate organic thin-film transistor (TFT) to minimize the difference between the top and bottom channel current characteristics and demonstrates it through experiment and 2-D simulation. In dual-gate organic TFTs, asymmetric top and bottom channel currents are mainly a result of their asymmetric contact geometry. To address this geometric limitation, the contact electrodes were sandwiched between the two organic semiconductor layers to be placed in a staggered position to both top and bottom gates. Two-way current crowding at the bistaggered contact electrodes leads to high-charge injection efficiency in both channels.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN
0018-9383
Keyword (Author)
2-D simulationcontact resistancedevice geometryindependent gate controlthin-film transistors (TFTs)
Keyword
THIN-FILM TRANSISTORSINTEGRATED-CIRCUITS

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