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Jin, Hosub
Quantum Materials Design Lab
Research Interests
  • Spin-orbit coupling, electron-correlation, topological quantum phases

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Defect-gradient-induced Rashba effect in van der Waals PtSe2 layers

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Title
Defect-gradient-induced Rashba effect in van der Waals PtSe2 layers
Author
Jo, JunhyeonKim, Jung HwaKim, Choong H.Lee, JaebyeongChoe, DaeseongOh, InseonLee, SeunghyunLee, ZonghoonJin, HosubYoo, Jung-Woo
Issue Date
2022-05
Publisher
Nature Publishing Group
Citation
NATURE COMMUNICATIONS, v.13, pp.2759
Abstract
Defect engineering is one of the key technologies in materials science, enriching the modern semiconductor industry and providing good test-beds for solid-state physics. While homogenous doping prevails in conventional defect engineering, various artificial defect distributions have been predicted to induce desired physical properties in host materials, especially associated with symmetry breakings. Here, we show layer-by-layer defect-gradients in two-dimensional PtSe2 films developed by selective plasma treatments, which break spatial inversion symmetry and give rise to the Rashba effect. Scanning transmission electron microscopy analyses reveal that Se vacancies extend down to 7 nm from the surface and Se/Pt ratio exhibits linear variation along the layers. The Rashba effect induced by broken inversion symmetry is demonstrated through the observations of nonreciprocal transport behaviors and first-principles density functional theory calculations. Our methodology paves the way for functional defect engineering that entangles spin and momentum of itinerant electrons for emerging electronic applications.
URI
https://scholarworks.unist.ac.kr/handle/201301/58556
URL
https://www.nature.com/articles/s41467-022-30414-4
DOI
10.1038/s41467-022-30414-4
ISSN
2041-1723
Appears in Collections:
PHY_Journal Papers
MSE_Journal Papers
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