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Jin, Hosub
Quantum Materials Design Lab
Research Interests
  • Spin-orbit coupling, electron-correlation, topological quantum phases

Defect-gradient-induced Rashba effect in van der Waals PtSe2 layers

DC Field Value Language Jo, Junhyeon ko Kim, Jung Hwa ko Kim, Choong H. ko Lee, Jaebyeong ko Choe, Daeseong ko Oh, Inseon ko Lee, Seunghyun ko Lee, Zonghoon ko Jin, Hosub ko Yoo, Jung-Woo ko 2022-05-27T02:14:57Z - 2022-05-20 ko 2022-05 ko
dc.identifier.citation NATURE COMMUNICATIONS, v.13, no.1, pp.2759 ko
dc.identifier.issn 2041-1723 ko
dc.identifier.uri -
dc.description.abstract Defect engineering is one of the key technologies in materials science, enriching the modern semiconductor industry and providing good test-beds for solid-state physics. While homogenous doping prevails in conventional defect engineering, various artificial defect distributions have been predicted to induce desired physical properties in host materials, especially associated with symmetry breakings. Here, we show layer-by-layer defect-gradients in two-dimensional PtSe2 films developed by selective plasma treatments, which break spatial inversion symmetry and give rise to the Rashba effect. Scanning transmission electron microscopy analyses reveal that Se vacancies extend down to 7 nm from the surface and Se/Pt ratio exhibits linear variation along the layers. The Rashba effect induced by broken inversion symmetry is demonstrated through the observations of nonreciprocal transport behaviors and first-principles density functional theory calculations. Our methodology paves the way for functional defect engineering that entangles spin and momentum of itinerant electrons for emerging electronic applications. ko
dc.language 영어 ko
dc.publisher Nature Publishing Group ko
dc.title Defect-gradient-induced Rashba effect in van der Waals PtSe2 layers ko
dc.type ARTICLE ko
dc.identifier.wosid 000798347800048 ko
dc.type.rims ART ko
dc.identifier.doi 10.1038/s41467-022-30414-4 ko
dc.identifier.url ko
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