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- Jeong, Changwook
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.conferencePlace | CH | - |
| dc.citation.conferencePlace | Hsinchu | - |
| dc.citation.endPage | 40 | - |
| dc.citation.startPage | 39 | - |
| dc.citation.title | International Symposium on VLSI Technology | - |
| dc.contributor.author | Park, J. H. | - |
| dc.contributor.author | Jeong, W. C. | - |
| dc.contributor.author | Oh, J. H. | - |
| dc.contributor.author | Jeong, Changwook | - |
| dc.contributor.author | Shin, J. M. | - |
| dc.contributor.author | Hwang, Y. N. | - |
| dc.contributor.author | Ahn, S. J. | - |
| dc.contributor.author | Lee, S. H. | - |
| dc.contributor.author | Lee, S. Y. | - |
| dc.contributor.author | Ryoo, K. C. | - |
| dc.contributor.author | Park, Jonghyun | - |
| dc.contributor.author | Yang, F. | - |
| dc.contributor.author | Koh, G. H. | - |
| dc.contributor.author | Jeong, G. T. | - |
| dc.contributor.author | Jeong, H. S. | - |
| dc.contributor.author | Kim, Kinam | - |
| dc.date.accessioned | 2023-12-20T05:36:51Z | - |
| dc.date.available | 2023-12-20T05:36:51Z | - |
| dc.date.created | 2022-04-07 | - |
| dc.date.issued | 2005-04-25 | - |
| dc.description.abstract | We investigate the key factors for scalable high density MRAM. Specifically we examine problems such as large switching field, small sensing margin and writing disturbance following a decrease in size. We demonstrate these problems and suggest several solutions for realizing high density MRAM. © 2005 IEEE. | - |
| dc.identifier.bibliographicCitation | International Symposium on VLSI Technology, pp.39 - 40 | - |
| dc.identifier.doi | 10.1109/VTSA.2005.1497074 | - |
| dc.identifier.scopusid | 2-s2.0-27144532743 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/58539 | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Integration technologies for scalable high density MRAM | - |
| dc.type | Conference Paper | - |
| dc.date.conferenceDate | 2005-04-25 | - |
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