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Ding, Feng
IBS - Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Theoretical methods development for materials studies.
  • The formation mechanism of various carbon materials, from fullerene to carbon nanotube and graphene.
  • Kinetics and thermodynamics of materials growth and etching.
  • The structure, properties and fundamentals of nanomaterials.
  • The experimental synthesis of carbon nanotubes.

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Boosting in-plane anisotropy by periodic phase engineering in two-dimensional VO2 single crystals

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Title
Boosting in-plane anisotropy by periodic phase engineering in two-dimensional VO2 single crystals
Author
Ran, MengZhao, ChaoXu, XiangKong, XiaoLee, YoungheeCui, WenjunHu, Zhi-YiRoxas, AlexanderLuo, ZhengtangLi, HuiqiaoDing, FengGan, LinZhai, Tianyou
Issue Date
2022-05
Publisher
KeAi Communications Co. Ltd.
Citation
Fundamental Research, v.2, no.3, pp.456 - 461
Abstract
In-plane anisotropy (IPA) due to asymmetry in lattice structures provides an additional parameter for the precise tuning of characteristic polarization-dependent properties in two-dimensional (2D) materials, but the narrow range within which such method can modulate properties hinders significant development of related devices. Herein we present a novel periodic phase engineering strategy that can remarkably enhance the intrinsic IPA obtainable from minor variations in asymmetric structures. By introducing alternant monoclinic and rutile phases in 2D VO2 single crystals through the regulation of interfacial thermal strain, the IPA in electrical conductivity can be reversibly modulated in a range spanning two orders of magnitude, reaching an unprecedented IPA of 113. Such an intriguing local phase engineering in 2D materials can be well depicted and predicted by a theoretical model consisting of phase transformation, thermal expansion, and friction force at the interface, creating a framework applicable to other 2D materials. Ultimately, the considerable adjustability and reversibility of the presented strategy provide opportunities for future polarization-dependent photoelectric and optoelectronic devices.
URI
https://scholarworks.unist.ac.kr/handle/201301/55669
DOI
10.1016/j.fmre.2021.11.020
ISSN
2667-3258
Appears in Collections:
MSE_Journal Papers
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