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- Kim, Dai-Sik
- Nano Optics Group
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Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity
- Author(s)
- Kim, DS, Ko, HS, Kim, YM, Rhee, SJ, Hong, SC, Yee, YH, Yee, DS, Woo, JC, Choi, HJ, Ihm, J, Woo, DH, Kang, KN
- Issued Date
- 1996-10
- DOI
- 10.1063/1.117724
- Citation
- APPLIED PHYSICS LETTERS, v.69, no.17, pp.2513 - 2515
- Abstract
- A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Angstrom-thick Al0.3Ga0.7As barrier is universally ''leaky'' with transport time of similar to 300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible.
- Publisher
- AMER INST PHYSICS
- ISSN
- 0003-6951
- Keyword
- SCANNING-TUNNELING-MICROSCOPY
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