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- Kim, Dai-Sik
- Nano Optics Group
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 2515 | - |
| dc.citation.number | 17 | - |
| dc.citation.startPage | 2513 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 69 | - |
| dc.contributor.author | Kim, DS | - |
| dc.contributor.author | Ko, HS | - |
| dc.contributor.author | Kim, YM | - |
| dc.contributor.author | Rhee, SJ | - |
| dc.contributor.author | Hong, SC | - |
| dc.contributor.author | Yee, YH | - |
| dc.contributor.author | Yee, DS | - |
| dc.contributor.author | Woo, JC | - |
| dc.contributor.author | Choi, HJ | - |
| dc.contributor.author | Ihm, J | - |
| dc.contributor.author | Woo, DH | - |
| dc.contributor.author | Kang, KN | - |
| dc.date.accessioned | 2023-12-22T12:38:40Z | - |
| dc.date.available | 2023-12-22T12:38:40Z | - |
| dc.date.created | 2021-10-22 | - |
| dc.date.issued | 1996-10 | - |
| dc.description.abstract | A significant charge transfer, which differs from tunneling, over thick AlxGa1-xAs barrier in GaAs/AlxGa1-xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-Angstrom-thick Al0.3Ga0.7As barrier is universally ''leaky'' with transport time of similar to 300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.69, no.17, pp.2513 - 2515 | - |
| dc.identifier.doi | 10.1063/1.117724 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.scopusid | 2-s2.0-0040554513 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/54687 | - |
| dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.117724 | - |
| dc.identifier.wosid | A1996VN89800021 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Thick AlxGa1-xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.type.docType | Article | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | SCANNING-TUNNELING-MICROSCOPY | - |
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